V (BR)DSS= 100 volts, It’s the maximum voltage that may be applied across drain to source of the device. It’s the maximum trigger voltage that may be applied across the gate and the source for optimal performance. P D = 130 Watts Max, The maximum power the FET can dissipate with and infinite (cool) heat sink ![]() I DM = 110 Amps Max, It’s the maximum current handling capacity of the device across the drain to the source, via the load, in a pulsed mode (NOT continuous). I D = 33 Amps Max at 10V (V GS), It’s the maximum current handling capacity of the device across the drain to the source, via the load, with gate voltage at 10V, at normal temperatures (25 to 35 degrees Cel.) ![]() Maximum tolerable limits of IRF540N are stated as under:
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